AHN Sung | Semiconductor R&D center, Samsung electronics Co., Ltd.
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概要
Semiconductor R&D center, Samsung electronics Co., Ltd. | 論文
- The Study on the Reaction Mechanism of HDP-SiOF Film and Inter-Metal-Dielectric Application
- The Study on the Reaction Mechanism of HDP-SiOF Film and Inter-Metal-Dielectric Application
- Suppression of Storage Node Contact Distortion for Gigabit-Scale DRAM with COB Structure
- Inter-Layer Dielectric Reliability on 1GDRAM with COB Structure
- A New, Low-Thermal-Budget Planarization Scheme for Pre-Metal Dielectric Using Electron-Beam Cured Hydrogen Silsesquioxane in Device