Teranishi Toshiharu | CREST, Japan Science and Technology Agency (JST), Yokohama 226-8503, Japan

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概要

• Teranishi Toshiharuの詳細を見る
• 同名の論文著者
• CREST, Japan Science and Technology Agency (JST), Yokohama 226-8503, Japanの論文著者

関連著者

• Azuma Yasuo

  Materials And Structures Laboratory Tokyo Institute Of Technology

• Majima Yutaka

  Materials And Structures Laboratory Tokyo Institute Of Technology

• Teranishi Toshiharu

  CREST, Japan Science and Technology Agency (JST), Yokohama 226-8503, Japan

• MATSUMOTO Kazuhiko

  CREST, Japan Science and Technology Agency

• Kano Shinya

  Materials And Structures Laboratory Tokyo Institute Of Technology

• Ohno Yasuhide

  CREST---Japan Science and Technology Agency (JST), Chiyoda, Tokyo 102-0076, Japan

• Hackenberger Guillaume

  Materials and Structures Laboratory, Tokyo Institute of Technology, Yokohama 226-8503, Japan

• Tanaka Daisuke

  CREST---Japan Science and Technology Agency (JST), Chiyoda, Tokyo 102-0076, Japan

• Sakamoto Masanori

  CREST---Japan Science and Technology Agency (JST), Chiyoda, Tokyo 102-0076, Japan

• Maehashi Kenzo

  CREST---Japan Science and Technology Agency (JST), Chiyoda, Tokyo 102-0076, Japan

• Kono Keijiro

  Materials and Structures Laboratory, Tokyo Institute of Technology, Yokohama 226-8503, Japan

• Azuma Yasuo

  Materials and Structures Laboratory, Tokyo Institute of Technology, Yokohama 226-8503, Japan

• Yasutake Yuhsuke

  Materials and Structures Laboratory, Tokyo Institute of Technology, Yokohama 226-8503, Japan

• Kanehara Masayuki

  CREST, Japan Science and Technology Agency (JST), Yokohama 226-8503, Japan

• Matsumoto Kazuhiko

  CREST---Japan Science and Technology Agency (JST), Chiyoda, Tokyo 102-0076, Japan

• Teranishi Toshiharu

  CREST---Japan Science and Technology Agency (JST), Chiyoda, Tokyo 102-0076, Japan

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著作論文

• Single-Electron Transistor Fabricated by Two Bottom-Up Processes of Electroless Au Plating and Chemisorption of Au Nanoparticle
• Silicon--Nitride-Passivated Bottom-Up Single-Electron Transistors
• Silicon--Nitride-Passivated Bottom-Up Single-Electron Transistors

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