Kanehara Masayuki | CREST, Japan Science and Technology Agency (JST), Yokohama 226-8503, Japan

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概要

関連著者

Azuma Yasuo
Materials And Structures Laboratory Tokyo Institute Of Technology
Majima Yutaka
Materials And Structures Laboratory Tokyo Institute Of Technology
Kono Keijiro
Materials and Structures Laboratory, Tokyo Institute of Technology, Yokohama 226-8503, Japan
Azuma Yasuo
Materials and Structures Laboratory, Tokyo Institute of Technology, Yokohama 226-8503, Japan
Yasutake Yuhsuke
Materials and Structures Laboratory, Tokyo Institute of Technology, Yokohama 226-8503, Japan
Kanehara Masayuki
CREST, Japan Science and Technology Agency (JST), Yokohama 226-8503, Japan
Teranishi Toshiharu
CREST, Japan Science and Technology Agency (JST), Yokohama 226-8503, Japan

著作論文

Single-Electron Transistor Fabricated by Two Bottom-Up Processes of Electroless Au Plating and Chemisorption of Au Nanoparticle

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