KANG Ji | Institute of Physics and Applied Physics, Yonsei University
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概要
Institute of Physics and Applied Physics, Yonsei University | 論文
- Geometric Effect of Channel on Device Performance in Pentacene Tin-Film Transistor
- Characterization of Surface Chemical States of a Thick Insulator : Chemical State Imaging on MgO Surface
- The Instability of Nitrogen Bonds in Oxygen Incorporated InN_O_x Films
- Geometric Effect of Channel on Device Performance in Pentacene Thin-Film Transistor
- Electrical and Structural Characteristics of High-k Gate Dielectrics with Epitaxial Si_3N_4 Interfacial Layer on Si(111)