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Institute of Physics and Applied Physics, Yonsei University | 論文
- Geometric Effect of Channel on Device Performance in Pentacene Tin-Film Transistor
- Electrical and Structural Characteristics of High-k Gate Dielectrics with Epitaxial Si_3N_4 Interfacial Layer on Si(111)
- Characterization of Surface Chemical States of a Thick Insulator : Chemical State Imaging on MgO Surface
- The Instability of Nitrogen Bonds in Oxygen Incorporated InN_O_x Films
- GaN-Based White-Light-Emitting Diodes Fabricated with a Mixture of Ba_3MgSi_2O_8 : Eu^ and Sr_2SiO_4 : Eu^ Phosphors
- Vector Meson in Nuclear Medium(Change of hadron properties in medium, Chiral dynamics in nuclear medium, New Frontiers in QCD-Exotic Hadrons and Hadronic Matter-)
- Geometric Effect of Channel on Device Performance in Pentacene Thin-Film Transistor
- Quark Number Susceptibility with Finite Quark Mass in Holographic QCD