Nagao Masayoshi | Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan
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- Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japanの論文著者
Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan | 論文
- Fabrication of ultrathin Si Channel Wall For Vertical Double-Gate Metal-Oxide-Semiconductor Field-Effect Transistor (DG MOSFET) by Using Ion-Bombardment-Retarded Etching (IBRE)
- Novel Process for Vertical Double-Gate (DG) Metal-Oxide-Semiconductor Field-Effect-Transistor (MOSFET) Fabrication
- Scanning Capacitance Microscopy Evaluation of Lead Zirconate Titanate Film Formed by Aerosol Deposition Method
- Spin-polarized Tunneling in Ultrasmall Vertical Ferromagnetic Tunnel Junctions