NISHIO Yoshifumi | Department of Electrical and Electronic Engineering, the University of Tokushima
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Department of Electrical and Electronic Engineering, the University of Tokushima | 論文
- Temperature and Illumination Dependence of AlGaN/GaN HFET Threshold Voltage(GaN-Based Devices,Heterostructure Microelectronics with TWHM2005)
- Finite-Element Analysis of Acoustic Surface Waveguides Using Approximate Analytical Solutions : Fundamentals
- Application of Finite Element Method to Acoustic Guidedwave Problems : Physical Acoustics I
- Gate Leakage Reduction Mechanism of AlGaN/GaN MIS-HFETs
- A Mechanism of Enhancement-Mode Operation of AlGaN/GaN MIS-HFET(GaN-Based Devices,Heterostructure Microelectronics with TWHM2005)