KANG Sung | Division of Material Science and Engineering, Hanyang University
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概要
論文 | ランダム
- Analysis of Buried-Oxide Dielectric Breakdown Mechanism in Low-Dose Separation by Implanted Oxygen (SIMOX) Substrates Fabricated by Internal Thermal Oxidation (ITOX) Process
- Analysis of Buried-Oxide Dielectric Breakdown Mechanism in Low-Dose SIMOX Structures
- Evaluation of Fixed Charge and Interface Trap Densities in SIMOX Wafers and Their Effects on Device Characteristics
- Current-Path Observation in Low-Dose SIMOX (Separation by Implanted Oxygen) Buried-SiO_2 Layer
- Dislocation Density Reduction in SIMOX (Separation by Implanted Oxygen) Multi-Energy Single Implantation