Chung U-In | Process Development Team, Memory Division, Semiconductor Business, Samsung Electronics Co., Ltd.
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- Process Development Team, Memory Division, Semiconductor Business, Samsung Electronics Co., Ltd.の論文著者
Process Development Team, Memory Division, Semiconductor Business, Samsung Electronics Co., Ltd. | 論文
- Improvement of Contact Resistance of Ru electrode/TiN barrier at Ru/Crystalline-Ta_2O_5/Ru Capacitor for 50nm DRAM device
- Investigation of Ru/TiN Bottom Electrodes Prepared by Chemical Vapor Deposition
- SiGe Source and Drain for Performance Boosting of Peripheral PMOS Transistor in High Density 4 Gb DRAM Technologies(Session 7A Silicon Devices IV,AWAD2006)
- SiGe Source and Drain for Performance Boosting of Peripheral PMOS Transistor in High Density 4Gb DRAM Technologies
- Study On Characteristics of Ge Based ARL for DUV Lithography