Asano Takashi | Department of Electronic Science and Engineering, Kyoto University, Kyoto 615-8510, Japan
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- Department of Electronic Science and Engineering, Kyoto University, Kyoto 615-8510, Japanの論文著者
Department of Electronic Science and Engineering, Kyoto University, Kyoto 615-8510, Japan | 論文
- Nearly Ideal Current--Voltage Characteristics of Schottky Barrier Diodes Formed on Hydride-Vapor-Phase-Epitaxy-Grown GaN Free-Standing Substrates
- Observation of Geometric Phases in Quantum Erasers
- Multi-Probe Atomic Force Microscopy with Optical Beam Deflection Method
- Multi-Probe Atomic Force Microscopy Using Piezoelectric Cantilevers
- Investigations of Local Electrical Properties of Pentacene Thin Films by Dual-Probe Atomic Force Microscopy