MOON Joo-Tae | Process Development Team, Memory Division, Semiconductor Business, Samsung Electronics Co. Ltd.
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概要
- Moon Joo-Taeの詳細を見る
- 同名の論文著者
- Process Development Team, Memory Division, Semiconductor Business, Samsung Electronics Co. Ltd.の論文著者
関連著者
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Moon Joo-tae
Process Development Team Semiconductor R&d Division Samsung Electronics Co. Ltd.
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Kim Sung-tae
Advanced Process Development Team Semiconductor R&d Division Samsung Electronics Co. Ltd.
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Chung U-in
Semiconductor R & D Center Samsung Electronics Co.ltd.
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MOON Joo-Tae
Process Development Team, Memory Division, Semiconductor Business, Samsung Electronics Co. Ltd.
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CHUNG U-In
Process Development Thani, Semiconductor R&D Division, Sam suns Uectronics Co., Ltd.
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KIM Sung-Tae
Process Development Team, Semiconductor R&D Division, Samsung Electronics Co., Ltd.
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Yoo Cha-young
Process Development Team Semiconductor R&d Division Samsung Electronics Co. Ltd.
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Kim Sung-tae
Process Development Team Semiconductor R&d Center Samsung Electronics Co. Ltd.
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Moon Joo-tae
Process Development Team Memory Division Samsung Electronics Co. Ltd.
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Chung U-in
Process Development Team Memory Division Samsung Electronics Co. Ltd.
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Yoo Chayoung
Process Development Team Semiconductor R&d Division Samsung Electronics Co. Ltd.
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Lim Han-jin
Semiconductor R&d Center Samsung Electronics Co.
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Lim Han-jin
Process Development Team Memory Division Semiconductor Business Samsung Electronics Co. Ltd.
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YOON Kyoung-Ryul
Process Development Team, Semiconductor R&D Division, Samsung Electronics Co., Ltd.
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IM Ki-Vin
Process Development Team, Semiconductor R&D Division, Samsung Electronics Co., Ltd.
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YEO Jea-Hyun
Process Development Team, Semiconductor R&D Division, Samsung Electronics Co., Ltd.
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CHUNG Eun-Ae
Process Development Team, Semiconductor R&D Division, Samsung Electronics Co., Ltd.
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KIM Young-Sun
Process Development Team, Semiconductor R&D Division, Samsung Electronics Co., Ltd.
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YOO Cha-Young
Process Development Team, Semiconductor R&D Division, Samsung Electronics Co., Ltd.
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KIM Hyun-Su
Process Development Team, Semiconductor R&D Center, Samsung Electronics Co., Ltd.
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YUN Jong-Ho
Process Development Team, Semiconductor R&D Center, Samsung Electronics Co., Ltd.
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MOON Kwang-Jin
Process Development Team, Semiconductor R&D Center, Samsung Electronics Co., Ltd.
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SOHN Woong-Hee
Process Development Team, Semiconductor R&D Center, Samsung Electronics Co., Ltd.
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JUNG Sug-Woo
Process Development Team, Semiconductor R&D Center, Samsung Electronics Co., Ltd.
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KIM Se-Hoon
CVD Division, COMTECS Co., Ltd.
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BAE Nam-Jin
CVD Division, COMTECS Co., Ltd.
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CHOI Gil-Heyun
Process Development Team, Semiconductor R&D Center, Samsung Electronics Co., Ltd.
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LIM HanJin
Process Development Team, Memory Division, Semiconductor Business, Samsung Electronics Co. Ltd.
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CHUNG Suk-Jin
Process Development Team, Memory Division, Semiconductor Business, Samsung Electronics Co. Ltd.
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LEE Jinil
Process Development Team, Memory Division, Semiconductor Business, Samsung Electronics Co. Ltd.
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KIM Jin
Process Development Team, Memory Division, Semiconductor Business, Samsung Electronics Co. Ltd.
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CHUNG SukJin
Process Development Team, Memory Division, Semiconductor Business, Samsung Electronics Co., Ltd.
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LEE Kwanghee
Process Development Team, Memory Division, Semiconductor Business, Samsung Electronics Co., Ltd.
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YOO ChaYoung
Process Development Team, Memory Division, Semiconductor Business, Samsung Electronics Co., Ltd.
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KIM SungTae
Process Development Team, Memory Division, Semiconductor Business, Samsung Electronics Co., Ltd.
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CHUNG Uin
Process Development Team, Memory Division, Semiconductor Business, Samsung Electronics Co., Ltd.
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MOON JooTae
Process Development Team, Memory Division, Semiconductor Business, Samsung Electronics Co., Ltd.
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CHEONG Seong-Hwee
Process Development Team, Semiconductor R&D Center, Samsung Electronics Co., Ltd.
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Chung Suk-jin
Process Development Team Memory Division Semiconductor Business Samsung Electronics Co. Ltd.
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Lee Jinil
Process Development Team Memory Division Semiconductor Business Samsung Electronics Co. Ltd.
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Lee Kwanghee
Process Development Team Semiconductor R&d Division Samsung Electronics Co. Ltd.
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Kim Young-sun
Process Development Team Semiconductor R&d Division Samsung Electronics Co. Ltd.
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Im Ki-vin
Process Development Team Semiconductor R&d Division Samsung Electronics Co. Ltd.
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Moon Kwang-jin
Process Development Team Semiconductor R&d Center Samsung Electronics Co. Ltd.
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Kim Hyun-su
Process Development Team Semiconductor R&d Center Samsung Electronics Co. Ltd.
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Yun Jong-ho
Process Development Team Semiconductor R&d Center Samsung Electronics Co. Ltd.
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Kim Se-hoon
Cvd Division Comtecs Co. Ltd.
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Lee Kwanghee
Process Development Team Memory Division Semiconductor Business Samsung Electronics Co. Ltd.
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Yoo Cha-young
Process Development Team Memory Division Semiconductor Business Samsung Electronics Co. Ltd.
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Bae Nam-jin
Cvd Division Comtecs Co. Ltd.
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Yeo Jea-hyun
Process Development Team Semiconductor R&d Division Samsung Electronics Co. Ltd.
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Choi Gil-heyun
Process Development Team Semiconductor R&d Center Samsung Electronics Co. Ltd.
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Chung Eun-ae
Process Development Team Semiconductor R&d Division Samsung Electronics Co. Ltd.
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Sohn Woong-hee
Process Development Team Semiconductor R&d Center Samsung Electronics Co. Ltd.
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Kim Jin
Advanced Process Development Team Semiconductor R&d Division Samsung Electronics Co. Ltd.
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Kim Jin
Process Development Team Memory Division Semiconductor Business Samsung Electronics Co. Ltd.
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Jung Sug-woo
Process Development Team Semiconductor R&d Center Samsung Electronics Co. Ltd.
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Cheong Seong-hwee
Process Development Team Semiconductor R&d Center Samsung Electronics Co. Ltd.
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Lim Hanjin
Process Development Team Memory Division Semiconductor Business Samsung Electronics Co. Ltd.
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Yoon Kyoung-ryul
Process Development Team Semiconductor R&d Division Samsung Electronics Co. Ltd.
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Moon Jootae
Process Development 1, Semiconductor R&D, Samsung Electronics Co. Ltd.
著作論文
- Performance and Reliability of MIM (Metal-Insulator-Metal) Capacitors with ZrO_2 for 50nm DRAM Application
- Improvement of Contact Resistance of Ru electrode/TiN barrier at Ru/Crystalline-Ta_2O_5/Ru Capacitor for 50nm DRAM device
- Investigation of CVD-Co Silicidation for the Improvement of Contact Resistance