YANG Ru | Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University
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- 同名の論文著者
- Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung Universityの論文著者
Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University | 論文
- P-Type Enhancement-Mode SiGe Doped-Channel Field-Effect Transistor
- A Novel Triple δ-Doped SiGe Heterostructure Field-Effect Transistor
- Low Temperature Activation of Mg-Doped GaN in O_2 Ambient : Semiconductors
- Vertical High Quality Mirrorlike Facet of GaN-Based Device by Reactive Ion Etching
- Investigation of Transport Mechanism for Strained Si n Metal-Oxide-Semiconductor Field-Effect Transistor Grown on Multi-Layer Substrate