Lucovsky Gerald | Departments of Physics and Electrical and Computer Engineering North Carolina State University
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- Departments of Physics and Electrical and Computer Engineering North Carolina State Universityの論文著者
Departments of Physics and Electrical and Computer Engineering North Carolina State University | 論文
- Thermal Relaxation Phenomena in the Formation of Device-Quality SiO_2/Si Interfaces
- Monolayer Nitrogen-Atom Distributions in Ultrathin Gate Dielectrics by Low-Temperature Low-Thermal-Budget Processing
- Low-Thermal-Budget Process-Controlled Monolayer Level Incorporation of Nitrogen into Ultra-Thin Gate Dielectric Structures : Applications to MOS Devices
- Integration of Plasma-Assisted and Rapid Thermal Processing for Low-Thermal Budget Preparation of Ultra-Thin Dielectrics for Stacked-Gate Device Structures
- Controlled Nitrogen Incorporation at Si-SiO_2 Interfaces by Remote Plasma-Assisted Processing