Xing Huili | Department of Electrical Engineering, University of Notre Dame, Notre Dame, IN 46556, U.S.A.
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- 同名の論文著者
- Department of Electrical Engineering, University of Notre Dame, Notre Dame, IN 46556, U.S.A.の論文著者
Department of Electrical Engineering, University of Notre Dame, Notre Dame, IN 46556, U.S.A. | 論文
- Experimental Test of Landauer's Principle at the Sub-k_{\text{B}} T Level
- Si-Containing Recessed Ohmic Contacts and 210 GHz Quaternary Barrier InAlGaN High-Electron-Mobility Transistors
- InGaN Channel High-Electron-Mobility Transistors with InAlGaN Barrier and f_{\text{T}}/f_{\text{max}} of 260/220 GHz
- Ultrascaled InAlN/GaN High Electron Mobility Transistors with Cutoff Frequency of 400 GHz
- InGaN Channel High-Electron-Mobility Transistors with InAlGaN Barrier and f_T/f_ of 260/220GHz