UCHIDA Ken | Advanced LSI Technology Laboratory, Research and Development Center, Toshiba Corporation
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概要
- 同名の論文著者
- Advanced LSI Technology Laboratory, Research and Development Center, Toshiba Corporationの論文著者
Advanced LSI Technology Laboratory, Research and Development Center, Toshiba Corporation | 論文
- Influence of High Dielectric Constant in Gate Insulator on Remote Coulomb Scattering due to Gate Impurities in Si MOS Inversion Layer
- Physical Origins of Surface Carrier Density Dependences of Interface- and Remote-Coulomb Scattering Mobility in Si MOS Inversion Layer
- Unified Roughness Scattering Model Incorporating Scattering Component Induced by Thickness Fluctuation in SOI MOSFETs
- Quantitative Understanding of Mobility Degradation in High Effective Electric Field Region in MOSFETs with Ultra-thin Gate Oxides
- Quantitative Examination of Mobility Lowering Associated with Ultrathin Gate Oxides in Silicon Metal-Oxide-Semiconductor Inversion Layer