OSAKA Jiro | Atsugi Electrical Communication Laboratory, Nippon Telegraph and telephone Public Corporation
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概要
- 同名の論文著者
- Atsugi Electrical Communication Laboratory, Nippon Telegraph and telephone Public Corporationの論文著者
Atsugi Electrical Communication Laboratory, Nippon Telegraph and telephone Public Corporation | 論文
- Origin of Surface Defects on Molecular Beam Epitaxially Grown GaAs
- Electrical Properties of Oval Defects in GaAs Grown by MBE
- Two-Dimensional Electron Gas at n-AlGaAs/GaAs Interface Grown by Molecular-Beam Epitaxy Using Direct-Radiation Substrate Heating
- Lateral Solid-Phase Epitaxy of Vacuum-Deposited Amorphous Si Film over Recessed SiO_2 Patterns
- A New p-Channel AlGaAs/GaAs MIS-Like Heterostructure FET Employing Two Dimensional Hole Gas