Hasegawa Yoshitaka | Advanced Technology R & D Center, Mitsubishi Electric Corporation
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Advanced Technology R & D Center, Mitsubishi Electric Corporation | 論文
- Protection of Field Oxide in Trench Isolation against Contact Hole Etching to Improve Alignment Tolerance
- Self-Aligned Pocket Implantation into Elevated Source/Drain MOSFETs for Reduction of Junction Capacitance and Leakage Current
- Advantage of Shallow Trench Isolation over Local Oxidation of Silicon on Alignment Tolerance
- Noticeable Enhancement of Edge Effect in Short Channel Characteristics of Trench-Isolated MOSFETs
- Anomalous Gate Length Dependence of Threshold Voltage of Trench-Isolated Metal Oxide Semiconductor Field Effect Transistors