EIMORI Takahisa | Research Department 1, Semiconductor Leading Edge Technologies, Inc.
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- Research Department 1, Semiconductor Leading Edge Technologies, Inc.の論文著者
Research Department 1, Semiconductor Leading Edge Technologies, Inc. | 論文
- Hf and N Release from HfSiON in High-Temperature Annealing Induced by Oxygen Incorporation
- Gate-Last MISFET Structures and Process for Characterization of High-k and Metal Gate MISFETs(Microelectronic Test Structures)
- Area Selective Flash Lamp Post-Deposition Annealing of High-k Film Using Si Photo Absorber for Metal Gate MISFETs with NiSi Source/Drain
- Interfacial Reaction of TiN/HfSiON Gate Stack in High-Temperature Annealing for Gate-First Metal–Oxide–Semiconductor Field-Effect Transistors
- Production-Worthy HfSiON Gate Dielectric Fabrication Enabling EOT Scalability Down to 0.86nm and Excellent Reliability by Polyatomic Layer Chemical Vapor Deposition Technique