MOMOSE Masayuki | Central Research Lab.Hitachi Ltd.
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概要
Central Research Lab.Hitachi Ltd. | 論文
- Optical Properties of GaN Thin Films on Sapphire Substrates Characterized by Variable-Angle Spectroscopic Ellipsometry
- Increased Size of Open Hexagonally Shaped Pits due to Growth Interruption and Its Influence on InGaN/GaN Quantum-Well Structures Grown by Metalorganic Vapor Phase Epitaxy
- Observation of the Surface Recombination Current with an Ideality Factor of Unity in AlGaAs/GaAs Heterojunction Bipolar Transistors
- On the Determination of the Specific Contact Resistance of Alloyed Contacts to n-GaAs
- Dependence of CdZnSe/ZnMgSSe Laser Diode Operating Characteristics on Band Gap and Net Acceptor Concentration of p-Type Cladding Layer