Tsuyuzaki H | Ntt Lsi Lab. Kanagawa Jpn
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概要
Ntt Lsi Lab. Kanagawa Jpn | 論文
- InP-Based Ultrafast Resonant Tunneling High Electron Mobility Transistors(RTHEMTs) : Novel I-V Characteristics and Circuit Applications
- Reset-set flip-flop based on a novel approach to modulating resonant-tunneling current with FETs
- InP-Based High-Performance Monostable-Bistable Transistion Logic Element (MOBILE):an Intelligent Logic Gate Featuring Weighted-Sum Threshold Operations
- InP-Based High-Performance Monostable-Bistable Transition Logic elements (MOBILEs) Using Resonant-Tunneling Devices
- Degradation and Recovery of Metal-Oxide-Semiconductor (MOS) Devices Stressed with Fowler-Nordheim (FN) Gate Current