Fujita Takeshi | Central Research Laboratory Hitachi
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概要
Central Research Laboratory Hitachi | 論文
- Process and Device Technologies for High Speed Self-Aligned Bipolar Transistors
- The Role of Hydrogen during Rapid Vapor-Phase Doping Analyzed by FTIR-ATR
- Shallow p-Type Layers in Si by Rapid Vapor-Phase Doping for High-Speed Bipolar and MOS Applications (Special Issue on Ultra-High-Speed LSIs)
- Reduction of Base Resistance and Increase in Cutoff Frequency of Si Bipolar Transistor Using Rapid Vapor-Phase Doping
- Reduction of Base Resistance and Enhancement of Cutoff Frequency of High-Speed Si Bipolar Transistor Using Rapid Vapor-Phase Doping