Inoue N | Frontier Science Innovation Center Osaka Prefecture University
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概要
Frontier Science Innovation Center Osaka Prefecture University | 論文
- Highly Localized Light Field on Metallic Nanoarrays Prepared with DNA Nanofibers
- Band-Gap Change in Ordered/Disordered GaAs_Sb_y Layers Grown on (001) and (111)B InP Substrates : Semiconductors
- Electroluminescence of In_Ga_As/GaAs_Sb_ Type-II Multiple Quantum Well Light-Emitting Diodes Grown on (111)B InP by Molecular Beam Epitaxy : Short Note
- Molecular Beam Epitaxial Growth and Characterization of GaAs_Sb_y Layers on (111)B InP Substrates
- MBE Growth and Characterization of InGaAsSbN Quantum Well Laser Diodes at 2μm Wavelength Region grown on InP Substrates