赤坂 泰志 | Semiconductor Leading Edge Technology Inc.
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概要
Semiconductor Leading Edge Technology Inc. | 論文
- Systematic studies on Fermi level pining of Hf-based high-k gate stacks
- Full-Metal-Gate Integration of Dual-Metal-Gate HfSiON CMOS Transistors by Using Oxidation-Free Dummy-Mask Process
- Guiding Principle of Energy Level Controllability of Silicon Dangling Bond in HfSiON
- Wide Controllability of Flatband Voltage in La_2O_3 Gate Stack Structures : Remarkable Advantages of La_2O_3 over HfO_2
- Evaluation of Dielectric Reliability of Ultrathin HfSiO_xN_y in Metal Gate Capacitors(Session 9A Silicon Devices VI,AWAD2006)