Lee Y. | Advanced Technology Development 2 Team Semiconductor R&d Center Memory Division Samsung Electron
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Advanced Technology Development 2 Team Semiconductor R&d Center Memory Division Samsung Electron | 論文
- High Density and Ultra-Low Power Mobile SRAM Using the Novel Double S^3 (Stacked Single-crystal Silicon) Technology and KrF lithography
- Self-Aligned Local Channel Implantation Using Reverse Gate Pattern for Deep Submicron Dynamic Random Access Memory Cell Transistors
- Cell Transistor Design Using Self-Aligned Local Channel Implant(SALCI) for 4Gb DRAMs and Beyond
- Tunnel Oxide Optimization to Improve Post-Cycling Retention of Flash Memories
- Highly Reliable 256Mb NOR Flash MLC with Self-Aligned Process and Controlled Edge Profile