Bolotov Leonid | Nanodevice Innovation Research Center National Institute Of Advanced Industrial Science And Technolo
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Nanodevice Innovation Research Center National Institute Of Advanced Industrial Science And Technolo | 論文
- Non-Volatile Resistance Switching Using Silicon Nanogap Junction
- High Electron Mobility Ge n-Channel Metal--Insulator--Semiconductor Field-Effect Transistors Fabricated by the Gate-Last Process with the Solid Source Diffusion Technique
- Measurements of Electrostatic Potential Across p--n Junctions on Oxidized Si Surfaces by Scanning Multimode Tunneling Spectroscopy
- Synthesis of New Amorphous Semiconductors Assembled from Transition-Metal-Encapsulating Si Clusters
- Fabrication of HfO_xN_y dielectrics on Ge from HfN_x deposition