Lo Guo-qiang | Silicon Nano Device Lab. Dept. Of Electrical And Computer Engineering National University Of Singapo
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Silicon Nano Device Lab. Dept. Of Electrical And Computer Engineering National University Of Singapo | 論文
- Contact Technology employing Nickel-Platinum Germanosilicide Alloys for P-Channel FinFETs with Silicon-Germanium Source and Drain Stressors
- Effectiveness of Aluminum Incorporation in Nickel Silicide and Nickel Germanide Metal Gates for Work Function Reduction
- Sub-30nm P-channel Schottky Source/Drain FinFETs : Integration of Pt_3Si FUSI Metal Gate and High-κ Dielectric
- Silicon Strain-Transfer-Layer (STL) and Graded Source/Drain Stressors for Enhancing the Performance of Silicon-Germanium Channel P-MOSFETs
- N-channel MOSFETs with In-situ Silane-Passivated Gallium Arsenide Channel and CMOS-Compatible Palladium-Germanium Contacts