Yang H.-s. | Inter-university Semiconductor Research Center (isrc):school Of Electrical Engineering And Computer
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- Inter-university Semiconductor Research Center (isrc):school Of Electrical Engineering And Computer の論文著者
Inter-university Semiconductor Research Center (isrc):school Of Electrical Engineering And Computer | 論文
- Gate-All-Around Tunnel Field-Effect Transistor (GAA TFET) with Vertical Channel and n-doped Layer
- Gate-All-Around Tunnel Field-Effect Transistor (GAA TFET) with Vertical Channel and n-doped Layer
- Synthesis of small diameter silicon nanowires on SiO_2 and Si3_N_4 surfaces
- Synthesis of small diameter silicon nanowires on SiO_2 and Si_3N_4 Surfaces
- Characteristic of Dual-Gate Single Electron Transistor (DG-SET) with extended channel using shallow doping and sidewall patterning for suppressing MOS current(Session 9B : Nano-Scale devices and Physics)