Hata Nobuhiro | Advanced Semiconductor Research Center National Institute Of Advanced Industrial Science And Technol
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Advanced Semiconductor Research Center National Institute Of Advanced Industrial Science And Technol | 論文
- Quantitative Analysis of Oxide Voltage and Field Dependence of Time-Dependent Dielectric Soft Breakdown and Hard Breakdown in Ultrathin Gate Oxides
- Experimental Evidence of Carrier Depletion Effect near n^+Poly-Si Gate Side
- Experimental Evidence of Carrier Depletion Effect near n^+Poly-Si Gate Side Wall/SiO_2 Interfaces for Sub-100nm nMOSFETs
- Analysis of Tunnel Current through Ultrathin Gate Oxides
- Gap-State Distributions in Hydrogenated Amorphous Silicon-Germanium Evaluated Using Capacitance-Voltage Method