Nakajima Shigeru | Electron Device Division Sumitomo Electric Industries Ltd.
スポンサーリンク
概要
関連著者
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Nakajima Shigeru
Electron Device Division Sumitomo Electric Industries Ltd.
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Saito Yoshihiro
Electron Device Division, Sumitomo Electric Industries, Ltd.
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Saito Yoshihiro
Electron Device Division, Sumitomo Electric Industries, Ltd. 1, Taya-cho, Sakae-ku, Yokohama 244-858
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Kagiyama Tomohiro
Electron Device Division, Sumitomo Electric Industries, Ltd. 1, Taya-cho, Sakae-ku, Yokohama 244-8588, Japan
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Nakata Ken
Electron Device Division Sumtitomo Electric Industries Ltd.
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NAKAJIMA Shigeru
Electron Device Division, Sumtitomo Electric Industries, Ltd.
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TANAKA Kunio
Electron Device Division, Sumtitomo Electric Industries, Ltd.
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OTOBE Kenji
Electron Device Division, Sumtitomo Electric Industries, Ltd.
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Otobe Kenji
Electron Device Division Sumtitomo Electric Industries Ltd.
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Nakajima Shigeru
Electron Device Division Sumtitomo Electric Industries Ltd.
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Nakajima Shigeru
Electron Device Division. Sumitomo Electric Industries Ltd
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Tanaka Kunio
Electron Device Division Sumtitomo Electric Industries Ltd.
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Kagiyama Tomohiro
Electron Device Division, Sumitomo Electric Industries, Ltd., 1 Taya-cho, Sakae-ku, Yokohama 244-858
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Saito Y
Electron Device Division Sumitomo Electric Industries Ltd.
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Shiga Nobuo
Electron Device Division, Sumitomo Electric Industries, Ltd. 1, Taya-cho, Sakae-ku, Yokohama 244-8588, Japan
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Nakajima Shigeru
Electron Device Division, Sumitomo Electric Industries, Ltd. 1, Taya-cho, Sakae-ku, Yokohama 244-8588, Japan
著作論文
- An InGaP/GaAs Composite Channel FET for High Power Device Applications (Joint Special Issue on Heterostructure Microelectronics with TWHM 2000)
- Effect of Oxygen Plasma on Activation of Implanted Silicon in Gallium Arsenide (II)
- Thermal Expansion and Atomic Structure of Amorphous Silicon Nitride Thin Films
- Effect of Silicon Nitride Cap on the Activation of Implanted Silicon in Gallium Arsenide
- The Effect of Oxygen Plasma on Activation Efficiency of Implanted Silicon in Gallium Arsenide
- Improvement of the Furnace Annealing Process to Suppress Slip Generation in Gallium Arsenide