Improvement of the Furnace Annealing Process to Suppress Slip Generation in Gallium Arsenide

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概要

• 論文の詳細を見る

• The furnace annealing process for the activation of the implants in GaAs substrates was investigated. During the annealing, if the temperature difference (TD) in the GaAs wafers exceeds a critical point, the increasing thermal stress causes sliplines in the wafers. Computer simulations and experiments have been carried out to clarify how the heat is transferred and TD occurs in the process. As a result, the cooling effect by convection was found much smaller than that by radiation. TD occurs when the radiation from the wafer edge is significantly more rapid than the thermal conduction within the wafer. The control of the balance between the heat radiation from the edge of the wafers and the thermal conduction in the wafers has been found to be the key point to suppress sliplines.

• Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyoの論文
• 2003-02-15

著者

• Nakajima Shigeru

  Electron Device Division Sumitomo Electric Industries Ltd.

• Saito Yoshihiro

  Electron Device Division, Sumitomo Electric Industries, Ltd.

• Nakajima Shigeru

  Electron Device Division, Sumitomo Electric Industries, Ltd. 1, Taya-cho, Sakae-ku, Yokohama 244-8588, Japan

関連論文

• An InGaP/GaAs Composite Channel FET for High Power Device Applications (Joint Special Issue on Heterostructure Microelectronics with TWHM 2000)
• Effect of Oxygen Plasma on Activation of Implanted Silicon in Gallium Arsenide (II)
• Thermal Expansion and Atomic Structure of Amorphous Silicon Nitride Thin Films
• Effect of Silicon Nitride Cap on the Activation of Implanted Silicon in Gallium Arsenide
• The Effect of Oxygen Plasma on Activation Efficiency of Implanted Silicon in Gallium Arsenide
• Improvement of the Furnace Annealing Process to Suppress Slip Generation in Gallium Arsenide

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