Effect of Oxygen Plasma on Activation of Implanted Silicon in Gallium Arsenide (II)

概要

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The effects of O2 plasma on the Ga out-diffusion and the activation efficiency ($\eta$) of implanted Si ions in GaAs were investigated. The total reflection X-ray fluorescence (TXRF) analyses clarified that the quantity of Ga out-diffusion into anneal cap was three times larger in the front-end wafer than in others. This corresponded to $\eta$ degradation by 11% for Si implantation of $4\times 10^{12}$/cm2 at 180 keV. From the induced coupled plasma (ICP) analyses, the absolute quantity of Ga out-diffusion that maximized $\eta$ was found to be smaller than $1.89\times 10^{14}$/cm2. It was also confirmed that the trend of $\eta$ shift by O2 plasma reversed as the implantation dose increased. From experiments to improve the O2 plasma process, a dummy wafer with a photo resist (P.R.) coating was confirmed to suppress the $\eta$ shift. The products from oxidation of P.R. play a role in the oxidation process in the plasma.
Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
2003-09-15