Huang Po-chin | Institute Of Microelectronics And Department Of Electrical Engineering National Cheng Kung Universit
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Institute Of Microelectronics And Department Of Electrical Engineering National Cheng Kung Universit | 論文
- GaN Ultraviolet MSM Photodetectors by capping a Low-Temperature AlN Layer
- GaN Metal-Semiconductor-Metal Photodetectors with an un-activated Mg-doped GaN Cap Layer
- Material and Electrical Characterization of Nickel Germanide for p-channel Germanium Schottky Source/Drain Transistors
- Transparent TiN Electrodes in GaN Metal-Semiconductor-Metal Ultraviolet Photodetectors(Semiconductors)
- On the Carrier Concentration and Hall Mobility in GaN Epilayers : Semiconductors