Hasegawa Takehiro | The Femtosecond Technology Research Association
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概要
関連著者
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Hasegawa Takehiro
The Femtosecond Technology Research Association
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WATANABE Shunji
Nikon Corporation
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WATANABE Shigeyoshi
ULSI Research Laboratories, Toshiba Corporation
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OHUCHI Kazunori
ULSI Research Laboratories, Toshiba Corporation
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Watanabe Souichi
The Niigata Institute Of Technology
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Watanabe S
Fujitsu Lab. Ltd. Kawasaki‐shi Jpn
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OHUCHI Kazunori
Research amp Development Center, ULSI Research Laboratories, Toshiba Corporation
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Ohuchi Kazunori
Research Amp Development Center Ulsi Research Laboratories Toshiba Corporation
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Wang X
Tsinghua Univ. Beijing Chn
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WANG Xiaomin
the Center for Applied Near Field Optics Research, National Institute of Advanced Industrial Science
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Watanabe Shigeyoshi
Ulsi Research Center Toshiba Corporation.
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Suzuki A
The Femtosecond Technology Research Association
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Nakano H
Department Of Physics Niigata University
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Sakui K
Toshiba Corp. Yokohama
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Masuoka F
Tohoku Univ. Sendai Jpn
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Masuoka Fujio
The Reserch Institute Of Electrical Communication Tohoku University
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Masuoka F
Research Institute Of Electrical Communication Tohoku University
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ARITOME Seiichi
ULSI Research Laboratories, Toshiba R&D Center
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MASUOKA Fujio
ULSI Research Laboratories, Toshiba R&D Center
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Nakano H
Microelectronics Engineering Laboratory Toshiba Corporation
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Nakano Hiroaki
Laboratory Of Innovational Biology Department Of Integrated Biosciences Graduate School Of Frontier
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SHIRATAKE Shinichiro
Microelectronics Engineering Laboratory, Toshiba Corporation
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TAKASHIMA Daisaburo
ULSI Research Laboratories, Toshiba Corporation
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HASEGAWA Takehiro
Microelectronics Engineering Laboratory, Toshiba Corporation
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NAKANO Hiroaki
Microelectronics Engineering Laboratory, Toshiba Corporation
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OOWAKI Yukihito
ULSI Research Laboratories, Toshiba Corporation
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OHSAWA Takashi
Microelectronics Engineering Laboratory, Toshiba Corporation
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SAKUI Koji
ULSI Research Center, TOSHIBA Corporation
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HASEGAWA Takehiro
ULSI Research Center, TOSHIBA Corporation
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FUSE Tsuneaki
ULSI Research Center, TOSHIBA Corporation
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SESHITA Toshiki
ULSI Research Center, TOSHIBA Corporation
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Aritome Seiichi
Ulsi Research Laboratories Toshiba R&d Center
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Nakano Hiroaki
Microelectronics Engineering Laboratory Toshiba Corporation
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Nakano H
Faculty Of Engineering Hosei University
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Ozaki T
Anritsu Measurement Solutions Atsugi‐shi Jpn
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Fuse T
Research Amp Development Center Ulsi Research Laboratories Toshiba Corporation
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Fuse Tsuneaki
Ulsi Research Center Toshiba Corporation.
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WAKABAYASHI Shin-ichi
Advanced Technology Research Laboratories, Matsushita Electric Industrial Co., Ltd.
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MORIYA Hitomi
Advanced Technology Research Laboratories, Matsushita Electric Industrial Co., Ltd.
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BABA Asako
Advanced Technology Research Laboratories, Matsushita Electric Industrial Co., Ltd.
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Seshita Toshiki
Ulsi Research Center Toshiba Corporation
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OOWAKI Yukihito
Research amp Development Center, ULSI Research Laboratories, Toshiba Corporation
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Oowaki Yukihito
Research Amp Development Center Ulsi Research Laboratories Toshiba Corporation
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Oowaki Yukihito
Ulsi Research Center Toshiba Corporation
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Baba A
Tohoku Univ. Sendai‐shi Jpn
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Moriya Hitomi
Advanced Technology Research Labs. Matsushita Electric Industrial Co. Ltd.
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Takashima D
Toshiba Corp. Yokohama‐shi Jpn
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Takashima Daisaburo
Ulsi Research Center Toshiba Corporation.
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Wakabayashi Shin-ichi
Advanced Technology Research Labs. Matsushita Electric Industrial Co. Ltd.
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HASEGAWA Tatsushi
Femtosecond Technology Research Association
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SUZUKI Akira
Femtosecond Technology Research Association
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KUNIMATSU Daisuke
the Device Business Group, Oki Electric Industry Co. Ltd.
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HASEGAWA Tatsushi
the Femtosecond Technology Research Association
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SUZUKI Akira
the Femtosecond Technology Research Association
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Shiratake Shinichiro
Microelectronics Engineering Laboratory Toshiba Corporation
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Kunimatsu Daisuke
The Device Business Group Oki Electric Industry Co. Ltd.
著作論文
- A New Reverse Base Current (RBC) of the Bipolar Transistor Induced by Impact Ionization
- Folded Bitline Architecture for a Gigabit-Scale NAND DRAM (Special Issue on Circuit Technologies for Memory and Analog LSIs)
- Tunable Dispersion and Dispersion Slope Compensator Based on Two Twin Chirped FBGs with Temperature Gradient for 160 Gbit/s Transmission(Ultrafast Photonics)
- Wide-Band Dispersion Compensation for 1000-km Single-Mode Fiber by Midway Spectral Inversion Using Cascaded Nonlinearities in LiNbO_3 Waveguide(Ultrafast Photonics)