Hasegawa Isahiro | Procurement Division Semiconductor Company Toshiba Corporation
スポンサーリンク
概要
関連著者
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Yamauchi Takeshi
Corporate Manufacturing Engineering Center Toshiba Corporation
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Hasegawa Isahiro
Procurement Division Semiconductor Company Toshiba Corporation
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Sugai Hideo
Department O Electrical Engineering Nagoya University
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Hasegawa Isahiro
Procurement Division, Semiconductor Company, Toshiba Corporation, 1-1-1 Shibaura, Minato-ku, Tokyo 105-8001, Japan
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Yamauchi Takeshi
Corporate Manufacturing Engineering Center, Toshiba Corporation, 33 Shin-isogo-cho, Isogo-ku, Yokohama 235-0017, Japan
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Sugai Hideo
Department of Electrical Engineering, Nagoya University
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Sugai Hideo
Department Of Electrical Engineering Nagoya University
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YAMAUCHI Takeshi
Corporate Manufacturing Engineering Center, TOSHIBA Corporation
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HASEGAWA Isahiro
Procurement Division, Semiconductor Company, Toshiba Corporation
著作論文
- Negative Ion Transfer Model of Low-Temperature Oxidation of Silicon Surface by High-Density Microwave Plasma
- Mechanism of Oxidation of Si Surfaces Exposed to O2/Ar Microwave-Excited Plasma
- Negative Ion Transfer Model of Low-Temperature Oxidation of Silicon Surface by High-Density Microwave Plasma