Takahashi K | System Lsi Technology Development Center Corporate System Lsi Division Semiconductor Company Matsush
スポンサーリンク
概要
- KAWASAKI Toshiakiの詳細を見る
- 同名の論文著者
- System Lsi Technology Development Center Corporate System Lsi Division Semiconductor Company Matsushの論文著者
System Lsi Technology Development Center Corporate System Lsi Division Semiconductor Company Matsush | 論文
- Decananometer Surrounding Gate Transistor (SGT) Scalability by Using an Intrinsically-Doped Body and Gate Work Function Engineering(Semiconductor Materials and Devices)
- A PND (PMOS-NMOS-Depletion MOS) Type Single Poly Gate Non-Volatile Memory Cell Design with a Differential Cell Architecture in a Pure CMOS Logic Process for a System LSI(Semiconductor Materials and Devices)
- MFMIS Structure for Nonvolatile Ferroelectirc Memory Using PZT Thin Film(Special Issue on Advanced Memory Devices Using High-ε and Ferroelectric Films)
- A Rewritable CMOS-FUSE for System-on-Chip with a Defferential Cell Architecture in a 0.13μm CMOS Logic Process(CMOS Fuse)(New Era of Nonvolatile Memories)
- Characterization of Carbon-Doped GaAs Grown by Molecular Beam Epitaxy Using Neopentane as Carbon Source