MFMIS Structure for Nonvolatile Ferroelectirc Memory Using PZT Thin Film(Special Issue on Advanced Memory Devices Using High-ε and Ferroelectric Films)

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概要

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• The metal/ferroelectric material/metal/oxide insulating material/Si substrates (MFMIS) structure was realized by using Pb (Zr_<0.4>Ti_<0.6>)O_3(PZT) thin film. PZT(330nm thick) thin film was sandwiched between the upper electrode of Ti/Pt-Rh (about 380nm thick and 123 microns in diameter) and the lower electrode of Pt-Rh/Ti (about 380nm thick and 378 microns in diameter). The MFM structures mentioned above were prepared on metal oxide semiconductor (MOS structures). Pt-Rh and Ti lower electrodes were directly deposited on a poly-Si MOS electode with sputtering, and PZT layer was prepared using the sol-gel method. In order to maximize induced charge density in the MOS gate, diameters of the upper and the lower electrodes were adjusted, and the MFM area-to-MOS area ratio was optimized. By using the area ratio of 0.11 a memory window of 2.4V was obtained.

• 社団法人電子情報通信学会の論文
• 1998-04-25

著者

• Satoh Shiro

  The Authors Are With The Research And Development Center Ricoh Co.ltd.

• Kawasaki T

  System Lsi Technology Development Center Corporate System Lsi Division Semiconductor Company Matsush

• Fujita Shunsuke

  The Authors Are With The Research And Development Center Ricoh Co.ltd.

• KAWASAKI Toshiyuki

  The authors are with the Research and Development Center, RICOH Co.LTD.

• AKIYAMA Yoshikazu

  The authors are with the Research and Development Center, RICOH Co.LTD.

• Akiyama Y

  Ricoh Co. Ltd. Yokohama Jpn

関連論文

• MFMIS Structure for Nonvolatile Ferroelectirc Memory Using PZT Thin Film(Special Issue on Advanced Memory Devices Using High-ε and Ferroelectric Films)

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