Muto A | Semiconductor Leading Edge Technol. Inc. Ibaraki Jpn
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概要
Semiconductor Leading Edge Technol. Inc. Ibaraki Jpn | 論文
- Impact of high temperature annealing on traps in physical-vapor-deposited-TiN/SiO2/Si analyzed by positron annihilation
- Suppression of Metamorphoses of Metal/High-$k$ Gate Stack by Low-Temperature, Cl-Free SiN Offset Spacer, and Its Impact on Scaled Metal–Oxide–Semiconductor Field-Effect Transistors
- Impact of High Temperature Annealing on Traps in Physical-Vapor-Deposited-TiN/SiO2/Si Analyzed by Positron Annihilation
- One-Laser-Two-Beam Method for Double Overwrite Speed in Rewritable Phase-Change Optical Discs
- Analyses of Signals from Dual-Layer Phase Change Optical Disks