Lin Y‐s | Department Of Electrical Engineering National Chi-nan University
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概要
Department Of Electrical Engineering National Chi-nan University | 論文
- Stress Reliability Comparison of Metal-Oxide-Semiconductor Devices with CoSi_2 and TiSi_2 Gate Electrode Materials
- Analysis, Design, and Optimization of Matched-Impedance Wide-Band Amplifiers With Multiple Feedback Loops Using 0.18 μm Complementary Metal Oxide Semiconductor Technology
- High-Quality-Factor and Low-Power-Loss Micromachined RF Bifilar Transformer for UWB RFIC Applications
- MEMS 3-D Stacked RF Transformers Fabricated by 0.18μm MS/RF CMOS technology With Improved Power Loss and Noise Figure Performances
- An Analysis of the Kink Effect of Scattering Parameter S_ in RF Power MOSFETs for System-On-Chip (SOC) Applications