SAKEMI Jun'ya | Hitachi ULSI Engineering Corp.
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概要
Hitachi ULSI Engineering Corp. | 論文
- A 6.93-μm^2 Full CMOS SRAM Cell Technology for 1.8-V High-Performance Cache Memory
- A 6-ns 4-Mb CMOS SRAM with Offset-Voltage-Insensitive Current Sense Amplifiers(Special Issue on the 1994 VLSI Circuits Symposium)
- B24-072 STRESS-OPTIMIZATION DESIGN OF A THIN-FILM SEMICONDUCTOR DEVICE
- Highly Anisotropic Etching of Polysilicon by Time-Modulation Bias
- Highly Selective Etching of Poly-Si by Time Modulation Bias