Park Ki‐tae | Memory Business Samsung Electronics Co. Ltd.
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概要
Memory Business Samsung Electronics Co. Ltd. | 論文
- Improved write methods for 64Mb Phase-change Random Access Memory(PRAM) (ISSCC特集3 不揮発性メモリ)
- Improved write methods for 64Mb Phase-change Random Access Memory (PRAM)
- Data Retention Characteristics of MONOS Devices with High-k Dielectrics and High-work Function Metal-gates for Multi-gigabit Flash Memory
- A Novel NAND Flash Technology with Selective Epitaxial Growth Plug Structure for the Improvement in HV Transistor Breakdown Voltage
- Scalable Wordline Shielding Scheme using Dummy Cell beyond 40nm NAND Flash Memory for Eliminating Abnormal Disturb of Edge Memory Cell