Nakamura T | Research Center Of Ion Beam Technology And College Of Engineering Hosei University
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Research Center Of Ion Beam Technology And College Of Engineering Hosei University | 論文
- Electrical Properties of N Ion Implanted Layer in (11^^00)-Oriented 6H-SiC
- Electrical Properties of N Ion Implanted Layer in $(1\bar{1}00)$-Oriented 6H-SiC
- Thermal Decompositiom of Ce0_2 in Ultra High Vacuum as a Cause of Polycrystalline Growth of Si Films on Epitaxial Ce0_2/Si
- Low-Temperature Epitaxial Growth of CeO_2(110)/Si(100) Structure by Evaporation under Substrate Bias
- Analysis of Misoriented Crystal Structure by Ion Channeling Observed Using Ion-Induced Secondary Electrons