Han I | Nano-device Research Center Korea Institute Of Science And Technology
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概要
Nano-device Research Center Korea Institute Of Science And Technology | 論文
- Electrical Characterization of InAs/InP Self-Assembled Quantum Dots by Deep-Level Transient Spectroscopy
- Structural and optical properties of InGaAs/GaAs quantum dots using atomic layer epitaxy technique for the application of optical Communication (先端デバイスの基礎と応用に関するアジアワークショップ)
- Structural and optical properties of InGaAs/GaAs quantum dots using atomic layer epitaxy technique for the application of optical communication (AWAD2003 (Asia-Pacific Workshop on Fundamental and Application of Advanced Semiconductor Devices))
- Electrical Characterization of InAs/InP Self-Assembled Quantum Dots by Deep-Level Transient Spectroscopy
- Invited Self-Assembled Quantum Dots--Physics and Device Applications (先端デバイスの基礎と応用に関するアジアワークショップ(AWAD2005))