Daido Y | Kanazawa Institute Of Technology
スポンサーリンク
概要
関連著者
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Daido Y
Kanazawa Institute Of Technology
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DAIDO Yoshimasa
Kanazawa Institute of Technology
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Araki Kiyomichi
Tokyo Inst. Of Technol. Tokyo Jpn
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Araki K
Graduate School Of Engineering Tokyo Institute Of Technology
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Araki K
Saitama Univ. Uarawa‐shi Jpn
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Araki Kiyomichi
The Department Of Computer Science Tokyo Institute Of Technology
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OISHI Yasuyuki
Fujitsu Laboratories
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Takano Takeshi
Fujitsu Laboratories
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TAKANO Takeshi
Fujitsu Laboratories Ltd.
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ARAKI Kiyomichi
Tokyo Institute of Technology
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Maniwa Toru
Fujitsu Laboratories Ltd., YRP R & D Center
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Maniwa Toru
Fujitsu Laboratories
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KIMURA Shigekazu
Fujitsu Laboratories Ltd.
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FUKUDA Eisuke
Fujitsu Laboratories Ltd.
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KAWABATA Yutaka
Computer and Network Systems Core, Kanazawa Institute of Technology
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DAIDO Yoshimasa
Computer and Network Systems Core, Kanazawa Institute of Technology
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HATTORI Shimmi
Computer and Network Systems Core, Kanazawa Institute of Technology
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Hattori S
Kanazawa Inst. Of Technol. Ishikawa‐ken Jpn
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Kawabata Yutaka
Computer And Network Systems Core Kanazawa Institute Of Technology
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OHISHI Yasuyuki
Fujitsu Laboratories Ltd.
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NAKAMURA Michiharu
Fujitsu Laboratories Ltd.
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NAGATANI Kazuo
Fujitsu Laboratories Ltd.
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Kobayashi K
Toyama Prefectural Univ. Toyama‐ken Jpn
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Kobayashi Kensuke
The Author Is With Lecroy Corp.
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Kobayashi K
The Author Is With Lecroy Corp.
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KOBAYASHI Kaname
Computer and Network Systems Core, Kanazawa Institute of Technology
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TAKAGO Daisuke
Kanazawa Institute of Technology
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NAKAMURA Michiharu
Fujitsu Laboratories Ltd
著作論文
- Non-linear Distortion Caused by the Electrical Memory Effect and its Dependence on the Circuit Parameters of a GaAs MESFET Amplifier
- Non-linear Distortion Caused by the Electrical Memory Effect and its Dependence on the Circuit Parameters of a GaAs MESFET Amplifier
- Non-linear Distortion Caused by the Electrical Memory Effect and its Dependence on the Circuit Parameters of a GaAs MESFET Amplifier
- Non-linear Distortion Caused by the Electrical Memory Effect and its Dependence on the Circuit Parameters of a GaAs MESFET Amplifier
- Capacity of Second-Order Bidirectional Associative Memory with Finite Neuron Numbers
- Noise Performance of Second-Order Bidirectional Associative Memory
- Efficient Method to Measure IMD of Power Amplifier with Simplified Phase Determination Procedure to Clarify Memory Effect Origins
- Iterative Determination of Phase Reference in IMD Measurement to Characterize Nonlinear Behavior, and to Derive Inverse, for Power Amplifier with Memory Effect
- Design of Predistorter with Efficient Updating Algorithm of Power Amplifier with Memory Effect