Park I‐w | Seoul Branch Korea Basic Science Institute
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概要
Seoul Branch Korea Basic Science Institute | 論文
- Improved Crystalline Quality of GaN by Substrate Ion Beam Pretreatment
- Implantation of N Ions on Sapphire Substrate for Improvement of GaN Epilayer
- Free Carrier Concentration Gradient along the $c$-Axis of a Freestanding Si-doped GaN Single Crystal
- Influence of Intentionally Strained Sapphire Substrate on GaN Epilayers
- Electrical Characterization of InAs/InP Self-Assembled Quantum Dots by Deep-Level Transient Spectroscopy