Lin T | United Microelectronics Corporation (umc) Central R&d Division
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概要
United Microelectronics Corporation (umc) Central R&d Division | 論文
- A Low Thermal Budget High Performance 0.25-0.18 μm Merged Logic Device and Dynamic Random Access Memory Application
- Raised Source/Drain on Different Integration Schemes for Sub-micro CMOS
- Raised Source/Drain on Different Integration Schemes for Sub-Micro CMOS
- Effect of STI Stress Enhanced Boron Diffusion on Leakage and Vcc min of Sub-65nm node Low-Power SRAM
- Optimization of Active Geometry Configuration and Shallow Trench Isolation (STI) Stress for Advanced CMOS Devices