Kagami M | Toyota Central R&d Laboratories Inc.
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概要
Toyota Central R&d Laboratories Inc. | 論文
- Characteristics of GaN p-n diode with damage layer induced by ICP plasma process(Session 6B : Wide Bandgap Materials and Devices, Power Devices)
- Mechanism of Residue Formation in Silicon Trench Etching Using a Bromine-Based Plasma
- GaN-Based Trench Gate Metal Oxide Semiconductor Field-Effect Transistor Fabricated with Novel Wet Etching
- Characteristics of GaN p-n diode with damage layer induced by ICP plasma process(Session 6B : Wide Bandgap Materials and Devices, Power Devices)
- Electrical Characterization of GaN p--n Junctions Grown on Freestanding GaN Substrates by Metal--Organic Chemical Vapor Deposition