Ku J‐h | Samsung Electronics Co. Ltd. Kyunggi‐do Kor
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概要
Samsung Electronics Co. Ltd. Kyunggi‐do Kor | 論文
- Trade-Off between Hot Carrier Effect and Current Driving Capability Due to Drain Contact Structures in Deep Submicron MOSFETs
- Effects of Low Temperature Interlayer Dielectric Films on the Gate Oxide Quality of Deep Submicron MOSFET's
- Effects of Low Temperature Interlayer Dielectric Films on the Gate Oxide Quality of Deep Submicron MOSFET's
- Defects study of retrograde twin well CMOS that has MeV ion implanted buried layer
- Defects study of retrograde twin well CMOS that has MeV ion implanted buried layer