Hong S‐k | Feram Device Team Memory R&d Division Hynix Semiconductor
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概要
Feram Device Team Memory R&d Division Hynix Semiconductor | 論文
- Ferroelectric Performance of Fully Integrated(Bi, La)_4Ti_3O_ Capacitor for Ferroelectric Memory
- Ferroelectric Performance of Fully Integrated(Bi, La)_4Ti_3O_ Capacitor for Ferroelectric Memory
- Characterization of Polarization Switching Behavior of Pt/SrBi_2Ta_2O_9/Pt Ferroelectric Capacitors in Ferroelectric Random Access Memory
- Estimation of Imprint Failure Lifetime in FeRAM with Pt/SrBi_2Ta_2O_9/Pt Capacitor(Special Issue on Nonvolatile Memories)
- Ferroelectric Memories using Randomly Oriented (Bi_La_x)_4Ti_3O_ Films