Hsu S | Sharp Laboratories Of America Inc.
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概要
Sharp Laboratories Of America Inc. | 論文
- One Transistor Ferroelectric Memory Devices with Improved Retention Characteristics
- Fabrication and Characterization of Sub-Micron Metal-Ferroelectric-Insulator-Semiconductor Field Effect Transistors withPt/Pb_5Ge_3O_/ZrO_2/Si Structure : Surfaces, Interfaces, and Films
- Thermal Stability and Interfacial Reaction of Barrier Layers with Low-Dielectric-Constant Fluorinated Carbon Interlayer
- Fabrication of Submicron IrO2 Nanowire Array Biosensor Platform by Conventional Complementary Metal–Oxide–Semiconductor Process
- One Transistor Ferroelectric Memory Devices with Improved Retention Characteristics