Lee C‐s | Department Of Electronic Engineering Feng Chia University
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概要
Department Of Electronic Engineering Feng Chia University | 論文
- A Gold-Free Fully Copper-Metallized InP Heterojunction Bipolar Transistor Using Non-Alloyed Ohmic Contact and Platinum Diffusion Barrier
- Gold-Free Fully Cu-Metallized InGaP/GaAs Heterojunction Bipolar Transistor
- High-Temperature Breakdown Characteristics of δ-Doped In_Ga_P/GaAs/In_Ga_As/AlGaAs High Electron Mobility Transistor
- Investigations of δ-Doped InAlAs/InGaAs/InP High-Electron-Mobility Transistors with Linearly Graded In_xGa_As Channel
- Double-Transconductance-Plateau Characteristics in InGaAs/GaAs Real-Space Transfer High Electron Mobility Transistor